| PART |
Description |
Maker |
| CFY25-P CFY25 CFY25-20 CFY25-20P CFY25-23 CFY25-23 |
X BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET
HiRel X-Band GaAs Low Noise / General Purpose MESFET 伊雷尔X波段功率低噪通用场效应晶体管
|
TRIQUINT SEMICONDUCTOR INC
INFINEON[Infineon Technologies AG]
|
| NE71083-07 NE710 NE71000 NE71083-06 NE71083-08 NE7 |
90 GHz, low noise Ku-K band GaAs MESFET
LOW NOISE Ku-K BAND GaAs MESFET 低噪声谷K波段GaAs MESFET器件
|
NEC Corp.
NEC, Corp.
|
| CLX30-10 CLX30 CLX30-00 CLX30-05 |
HiRel X-Band GaAs Power-MESFET
Reed Relay; Contacts:SPST; Contact Carry Current:1A; Coil Voltage DC Max:24V; Relay Terminals:Thru Hole; Switching Current Max:0.5A; Switching Voltage Max:200V; Contact Carrying Power:10W; Leaded Process Compatible:Yes RoHS Compliant: Yes
|
Infineon Technologies A...
INFINEON[Infineon Technologies AG]
|
| ND4131-3D |
2 W, 4 V, C-band power GaAs MESFET
|
NEC
|
| NE960R27501 NE960R275 |
0.2W X, Ku-BAND POWER GaAs MESFET
|
NEC[NEC]
|
| NE650103M-A |
10 W L & S-BAND POWER GaAs MESFET
|
California Eastern Laboratories
|
| NES1823P-100 |
100W L-BAND PUSH-PULL POWER GaAs MESFET
|
NEC[NEC]
|
| CGY4111 |
HiRel L- and S-Band GaAs General Purpose Amplifier
|
Infineon Technologies AG
|
| CFY67 CFY67-06 CFY67-08 CFY67-08P CFY67-10 CFY67-1 |
HiRel K-Band GaAs Super Low Noise HEMT
|
INFINEON[Infineon Technologies AG]
|
| RFS1006 PRFS-1006-0007 PRFS-1006-0008 PRFS-1006-00 |
3.4-3.6 GHz Power Amplifier 3400 MHz - 3600 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
3.4-3.6 GHz Power Amplifier 3号至三月六日GHz功率放大
Single-band power amplifiers
The RFS1006 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in a transmit applications in the 3.4-3.6 ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
